Design achieves both high-performance and high-efficiency for
networking, computing, and consumer applications
SUNNYVALE, Calif.--(BUSINESS WIRE)--
Rambus Inc. (NASDAQ:RMBS) today announced it has developed an R+™ DDR4/3
PHY on the Samsung 28nm LPP process. Through the collaboration with
Samsung, Rambus has achieved a robust, production-ready R+ DDR4/3 PHY on
the power-performance optimized 28nm Low Power Plus (LPP) process. The
Rambus design has been characterized at a system level, and can be
easily integrated into a SoC.
"With the ongoing demand for data alongside the cloud driving more and
more networking, the need for faster speeds and better bandwidth has
never been more prevalent," said Kevin Donnelly, general manager of the
Memory and Interface division at Rambus. "Successfully taping out a
production-ready R+ DDR4/3 PHY on the Samsung 28nm LPP process is a
major step in our strategic and valued partnership. Together we are
breaking the necessary ground to achieve the best possible speeds and
bandwidth required by today's consumer and networking devices."
The Rambus R+ DDR4 multi-modal memory PHY enables customers to
differentiate their offerings by providing industry-leading performance
while maintaining full compatibility with industry standard DDR4, and
DDR3 interfaces. Designed for server, compute, networking and consumer
applications, the R+ DDR4 PHY delivers versatile configuration options
for both area/power optimized consumer applications and performance
intensive compute applications. The DDR4 IP product supports data rates
from 800 to 3200Mbps in a low-power process and is available in both PoP
and discrete packages.
"Our high-volume 28nm LPP technology gives SoC designers a robust
manufacturing option for a new generation of feature-rich consumer
devices," said Shawn Han, Vice President of Foundry Marketing, Samsung.
"We are pleased to be collaborating with Rambus to demonstrate the
capabilities of Samsung's 28nm processes and the design enablement
ecosystem available for Samsung's foundry customer and IP partners."
The R+ DDR4/3 design leverages the wide range of design enablement
support and expertise that Samsung offers, including process design kits
(PDKs), DFM kits, analog mixed signal reference flow, extensive
implementation services, and silicon proven logic libraries. Rambus also
utilized Samsung's foundry assembly support resources to provide a
flip-chip packaging option on the high speed PHY design. In addition,
Samsung's 28nm Low-Power (LP) Gate First High-k Metal Gate (HKMG)
process offers considerable power and performance advantages to a
growing spectrum of mobile, consumer and IT infrastructure-computing
applications.
RMBSTN
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About Rambus Inc.
Rambus brings invention to market. Our customizable IP cores,
architecture licenses, tools, services, and training improve the
competitive advantage of our customer's products while accelerating
their time-to-market. Rambus products and innovations capture, secure
and move data. For more information, visit rambus.com.
MSLGROUP for Rambus
Sam Katzen, 415-512-0770
rambus@mslgroup.com
Source: Rambus Inc.
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