First silicon-based demonstration of it Ultra-Fast Power-On Technology
SANTA CLARA, Calif.--(BUSINESS WIRE)--
Rambus Inc. (NASDAQ: RMBS):
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Who:
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Rambus Inc. (NASDAQ: RMBS)
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Where:
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DesignCon 2012
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Santa Clara Convention Center — Booth #301
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Santa Clara, CA
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When:
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January 30 — February 2, 2012
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Rambus will showcase innovations of its Ultra-Fast Power-On Technology,
its Terabyte Bandwidth Initiative, DDR3 Memory Interface, and
Cryptography Research at DesignCon 2012, booth #301, at the Santa Clara
Convention Center in Santa Clara, CA.
Engineers from Rambus will also be presenting 10 technical papers on
topics including signal integrity, high-speed memory design,
semiconductor security and more (see RAMBUS TO PRESENT 10 PAPERS AT
DESIGNCON 2012).
Rambus Demonstrations:
Ultra-Fast Power-on Technology
This silicon-based demonstration showcases Rambus' ultra-fast power-on,
low-power clocking technology that can enable a whole new class of
memory devices. Implemented in a 40nm low-power CMOS process, this
technology is capable of transitioning from a zero-power idle state to a
5+ Gb/s data transfer rate in 5 nanoseconds (ns) while achieving active
power of only 2.4mW/Gb/s. A feed-forward architecture is used to achieve
extremely fast turn-on and turn-off, simplifying the system design and
significantly reducing the overall system power requirements.
DDR3 Memory Interface Solution
This high-performance, low-cost DDR3 memory controller interface
solution is tailored for consumer electronics. The solution demonstrates
operation in working silicon at a data rate of 1866 megatransfers per
second (MT/s) in a low-cost wire bond package.
Mobile Device Side Channel Attack
All forms of electronic devices with secret keys are susceptible to side
channel attacks, which are low-cost, non-invasive methods for
adversaries to extract secret keys of a cryptosystem. Cryptography
Research, a division of Rambus, developed DPA countermeasures to protect
tamper-resistant devices such as mobile phones and game consoles against
all forms of side channel attacks. This demonstration uses basic
electromagnetic equipment to perform side channel attacks to extract the
security key from two mobile devices.
Terabyte Bandwidth Initiative
The latest technology advancements of Rambus' Terabyte Bandwidth
Initiative enable unmatched power efficiency and compatibility to
single-ended memory architectures, including GDDR5 and DDR3. With the
addition of FlexMode™ interface technology, a multi-modal, SoC memory
interface PHY, supporting both differential and single-ended signaling,
can be implemented in a single SoC package design with no additional
pins. This demo will showcase how Rambus' Terabyte Bandwidth Initiative
has achieved a power efficiency of 6 milliwatts per gigabit per second
(mW/Gbps) when operating at 20Gbps in a 40nm-process silicon test
vehicle.
About Rambus Inc.
Rambus is one of the world's premier technology licensing companies.
Founded in 1990, the Company specializes in the invention and design of
architectures focused on enriching the end-user experience of electronic
systems. Rambus' patented innovations and breakthrough technologies help
industry-leading companies bring superior products to market. Rambus
licenses both its world-class patent portfolio, as well as its family of
leadership and industry-standard solutions. Headquartered in Sunnyvale,
California, Rambus has regional offices in North Carolina, Ohio, India,
Germany, Japan, Korea, and Taiwan. Additional information is available
at www.rambus.com.
RMBSTN
Press:
Rambus
Inc.
Linda Ashmore, 408-462-8411
lashmore@rambus.com
or
The
Hoffman Agency for Rambus
Kari Ramirez, 408-975-3038
kramirez@hoffman.com
Source: Rambus Inc.
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