Company to demonstrate high-performance, low-power memory
technologies
BEIJING--(BUSINESS WIRE)--
Rambus Inc. (NASDAQ:RMBS):
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Who:
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Rambus Inc. (NASDAQ: RMBS)
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Where:
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Intel Developer Forum (IDF)
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Booth #G1
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China National Convention Center
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Beijing, China
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When:
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April 12-13, 2011
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Join Rambus
Inc., one of the world's premier technology licensing companies, at
the Intel Developer Forum (IDF) in Beijing. In addition to presenting a
session on advancing memory interface performance, Rambus will showcase
live demos of innovations from its Terabyte Bandwidth Initiative, DDR3
Memory Interface and Mobile XDR™ memory architecture.
Rambus Presentation
Tuesday, April 12, 2011, 13:00 CST
Advancing Memory Interface
Performance through Concurrent Engineering
Presenter: Dr. Chuck
Yuan, Director of Engineering, Rambus Inc.
During the session, Dr. Yuan will discuss the trend of memory data rates
rising beyond 1 gigabit per second (Gbps), which dramatically increases
the level of interface design complexity. To meet the performance needs
and cost constraints of next-generation electronic systems, a broad set
of design considerations, including silicon, package, and PCB design,
must be simultaneously optimized. The session will address the
concurrent engineering approach adopted at Rambus to optimize the PHY
together with the system to achieve breakthrough performance at reduced
cost in industry standard and advanced high-performance memories.
Rambus Demos
Terabyte Bandwidth Initiative
The latest technology advancements of Rambus' Terabyte Bandwidth
Initiative enable unmatched power efficiency and compatibility to
single-ended memory architectures, including GDDR5 and DDR3. With the
addition of FlexMode™ interface technology, a multi-modal, SoC memory
interface PHY, supporting both differential and single-ended signaling,
can be implemented in a single SoC package design with no additional
pins. This demo will showcase how Rambus' Terabyte Bandwidth Initiative
has achieved a power efficiency of 6 milliwatts per gigabit per second
(mW/Gbps) when operating at 20Gbps in a 40nm-process silicon test
vehicle.
DDR3 PHY Development Package
This high-performance, low-cost DDR3 memory controller interface
solution is tailored for consumer electronics. The solution is the first
to demonstrate operation in working silicon at a data rate of 1866
megatransfers per second (MT/s) in a low-cost wire bond package.
Mobile XDR™ Memory Architecture
Mobile XDR memory is the fastest and most power-efficient memory for
mobile applications. Capable of achieving data rates of 3.2 to 4.3Gbps
at an unprecedented power efficiency of 2.2mW/Gbps, Mobile XDR memory is
ideal for next-generation smartphones, netbooks, mobile gaming and
mobile multimedia products.
About Rambus Inc.
Founded in 1990, Rambus is one of the world's premier technology
licensing companies. As a company of inventors, Rambus focuses on the
development of technologies that enrich the end-user experience of
electronic systems. Its breakthrough innovations and solutions help
industry-leading companies bring superior products to market. Rambus
licenses both its world-class patent portfolio, as well as its family of
leadership and industry-standard solutions. Headquartered in Sunnyvale,
California, Rambus has regional offices in North Carolina, Ohio, India,
Germany, Japan, Korea, and Taiwan. Additional information is available
at www.rambus.com.
RMBSTN
Rambus
Inc.
Linda Ashmore, 408-462-8411
lashmore@rambus.com
or
The
Hoffman Agency for Rambus
Kari Ramirez, 408-975-3038
kramirez@hoffman.com
Source: Rambus Inc.
News Provided by Acquire Media